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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D071
BFG505; BFG505/X NPN 9 GHz wideband transistors
Product specification Supersedes data of September 1995 1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV).
PINNING DESCRIPTION PIN BFG505 1 2 3 4 collector base emitter emitter BFG505/X collector emitter base emitter
handbook, 2 columns 4
3
DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.
1 2
MSB014
MARKING TYPE NUMBER BFG505 BFG505/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain Ts 130 C VCE = 6 V; IC = 5 mA VCB = 6 V; IC = ic = 0; f = 1 MHz VCE = 6 V; IC = 5 mA; f = 1 GHz VCE = 6 V; IC = 5 mA; Tamb = 25 C; f = 900 MHz VCE = 6 V; IC = 5 mA; Tamb = 25 C; f = 2 GHz S212 F insertion power gain noise figure VCE = 6 V; Ic = 5 mA; Tamb = 25 C; f = 900 MHz s = opt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 C; f = 900 MHz s = opt; VCE = 6 V; Ic = 5 mA; Tamb = 25 C; f = 900 MHz s = opt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 C; f = 2 GHz collector-emitter voltage RBE = 0 CONDITIONS open emitter CODE N33 N39
Top view
Fig.1 Simplified outline SOT143B.
MIN. - - - - 60 - - - - 16 - - - - - - -
TYP.
MAX. 20 15 18 150 250 - - - - - 1.7 2.1 -
UNIT V V mA mW pF GHz dB dB dB dB dB dB
120 0.2 9 20 13 17 1.2 1.6 1.9
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point note 1 CONDITIONS VALUE 290 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction temperature Ts 130 C; see Fig.2; note 1 RBE = 0 open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 15 2.5 18 150 150 175 V V V mA mW C C UNIT
handbook, halfpage
200
MRA638-1
Ptot (mW) 150
100
50
0 0 50 100 150 Ts (C) 200
Fig.2 Power derating curve.
1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS VCB = 6 V; IE = 0 IC = 5 mA; VCE = 6 V; see Fig.3 IC = ic = 0 VEB = 0.5 V; f = 1 MHz VCB = 6 V; IE = ie = 0; f = 1 MHz IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4 IC = 5 mA; VCE = 6 V; f = 1 GHz; see Fig.5 IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz Ic = 5 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz S212 F insertion power gain noise figure Ic = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz PL1 ITO Notes output power at 1 dB gain compression third order intercept point IC = 5 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; f = 900 MHz note 2 - 60 - - - - - - 16 - - - - - MIN. - 120 0.4 0.3 0.2 9 20 13 17 1.2 1.6 1.9 4 10 TYP. MAX. 50 250 - - - - - - - 1.7 2.1 - - - pF pF pF GHz dB dB dB dB dB dB dBm dBm UNIT nA
S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. ( 1 - S 11 2 ) ( 1 - S 22 2 ) 2. VCE = 6 V; IC = 5 mA; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at 2fp - fq = 898 MHz and 2fq - fp = 904 MHz.
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, halfpage
250
MRA639
handbook, halfpage
0.4
MRA640
hFE 200
Cre (pF) 0.3
150 0.2 100 0.1 50
0 10-3
10-2
10-1
1
10
102 IC (mA)
0 0 2 4 6 8 10 VCB (V)
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current.
Fig.4
Feedback capacitance as a function of collector-base voltage.
handbook, halfpage
12
MRA641
handbook, halfpage
25
MRA642
fT (GHz) 8
VCE = 6 V VCE = 3 V
gain (dB) 20
GUM
MSG 15
10 4 5
0 10-1
1
10
IC (mA)
102
0 0 4 8 IC (mA) VCE = 6 V; f = 900 MHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 12
Tamb = 25 C; f = 1 GHz.
Fig.5
Transition frequency as a function of collector current.
Fig.6 Gain as a function of collector current.
1998 Oct 02
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, halfpage
25
MRA643
MRA644
handbook, halfpage
50
gain (dB) 20
gain (dB) 40 MSG
GUM
15
Gmax
30
MSG
10
GUM 20
5
10
0 0 4 8 IC (mA) VCE = 6 V; f = 2 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 12
0 10
102
103
f (MHz)
104
VCE = 6 V; IC = 1.25 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of frequency.
MRA645
handbook, halfpage
50
handbook, halfpage
5
MRA650
gain (dB) 40
GUM
Fmin (dB) 4
f = 900 MHz
20 Gass (dB) 15
1000 MHz Gass 2000 MHz
MSG 30 3
10
20 Gmax
2
2000 MHz 1000 MHz 900 MHz 500 MHz Fmin
5
10
1
0
0 10
102
103
f (MHz)
104
0 10-1
1
IC (mA)
-5 10
VCE = 6 V; IC = 5 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
VCE = 6 V.
Fig.9 Gain as a function of frequency.
Fig.10 Minimum noise figure and associated available gain as functions of collector current.
1998 Oct 02
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
I andbook, halfpage C = 1.25 mA Fmin (dB) 4
5
MRA651
5 mA Gass
20 Gass (dB) 15
3
10
2 5 mA 1 1.25 mA 0 102
5
Fmin
0
103
f (MHz)
-5 104
VCE = 6 V.
Fig.11 Minimum noise figure and associated available gain as functions of frequency.
handbook, full pagewidth
pot. unst. region
90 1.0 1 45 0.8 0.6
135
0.5
2
stability circle 0.2 Fmin = 1. 2 dB 0.2 0.5 1 OPT F = 1.5 dB 2 5 F = 2 dB F = 3 dB 5
0.4 0.2 0 0
180
0
0.2
5
-135
0.5 1
2
-45
MRA652
1.0
Zo = 50 . VCE = 6 V; Ic = 1.25 mA; f = 900 MHz.
-90
Fig.12 Noise circle figure.
1998 Oct 02
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, full pagewidth
pot. unst. region
90 1.0 1 45 0.8 0.6 OPT 0.4 0.2
135
0.5
2
0.2 stability circle 180 0 0.2 0.5
Fmin = 1. 9 dB F = 2.5 dB 1 2 F = 3 dB F = 4 dB
5
5
0
0
0.2
5
-135
0.5 1
2
-45
MRA653
1.0
-90 Zo = 50 . VCE = 6 V; Ic = 1.25 mA; f = 2000 MHz.
Fig.13 Noise circle figure.
1998 Oct 02
8
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 1 2 5 40 MHz 0 0
0.2 3 GHz 180 0 0.2 0.5
5
0.2
5
-135
0.5 1
2
-45
MRA646
1.0
VCE = 6 V; IC = 5 mA. Zo = 50 .
-90
Fig.14 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90
135
45
40 MHz
3 GHz
180 15 12 9 6 3
0
-135
-45
-90 VCE = 6 V; IC = 5 mA.
MRA647
Fig.15 Common emitter forward transmission coefficient (S21).
1998 Oct 02
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, full pagewidth
90
135
45
3 GHz
180 0.25
40 MHz 0.20 0.15 0.10 0.05
0
-135
-45
-90 VCE = 6 V; IC = 5 mA.
MRA648
Fig.16 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5
40 MHz
0.2
5
0
0
0.2
3 GHz
5
-135
0.5 1
2
-45
MRA649
1.0
VCE = 6 V; IC = 5 mA. Zo = 50 .
-90
Fig.17 Common emitter output reflection coefficient (S22).
1998 Oct 02
10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1998 Oct 02
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1998 Oct 02
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
NOTES
BFG505; BFG505/X
1998 Oct 02
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
NOTES
BFG505; BFG505/X
1998 Oct 02
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
NOTES
BFG505; BFG505/X
1998 Oct 02
15
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/03/pp16
Date of release: 1998 Oct 02
Document order number:
9397 750 04348

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